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3 here is the channel length which is equal to and is the source drain side diffusion.
Consider the nmos device is in saturation region and the length of the device l is equal to effective length due to the source drain side diffusion.
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Modify equation 2 for nmos device.
The second edition of design of analog cmos integrated circuits by behzad razavi deals with the analysis and design of analog cmos integrated circuits emphasizing fundamentals as well as new paradigms that students and practicing engineers need to master in today s industry.
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